The TS128MSQ64V8U is a 128M x 64bits DDR2-800 SO-DIMM. The TS128MSQ64V8U consists of 8pcs 128Mx8bits DDR2 SDRAMs in 68 ball FBGA packages and a 2048 bits serial EEPROM on a 200-pin printed circuit board. The TS128MSQ64V8U is a Dual In-Line Memory Module and is intended for mounting into 200-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges of DQS. Range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Features – RoHS compliant products. – JEDEC standard 1.8V ± 0.1V Power supply. – VDDQ=1.8V ± 0.1V. – Max clock Freq: 400MHZ; 800Mb/s/Pin. – Posted CAS. – Programmable CAS Latency: 3,4,5. – Programmable Additive Latency :0, 1,2,3 and 4. – Write Latency (WL) = Read Latency (RL)-1. – Burst Length: 4,8(Interleave/nibble sequential). – Programmable sequential / Interleave Burst Mode. – Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature). – Off-Chip Driver (OCD) Impedance Adjustment. – MRS cycle with address key programs. – On Die Termination. – Serial presence detect with EEPROM.